Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

Self-consistent modeling of longitudinal quantum effects in nanoscale double-gate metal oxide semiconductor field effect transistors

Ultrathin double-gate silicon-on-insulator transistors are studied in the quantum coherent limit. By treating electron-electron interaction on the level of a mean field approach, the density matrix of the device becomes diagonal when expressed in a basis that results from imposing scattering boundary conditions at the terminals. The self-consistent scattering wave functions are computed using a...

A quantum-mechanical treatment of phonon scattering in carbon nanotube transistors

Phonon scattering in carbon nanotube field-effect transistors CNTFETs is treated using the nonequilibrium Green’s function formalism with the self-consistent Born approximation. The treatment simultaneously captures the essential physics of phonon scattering and important quantum effects. For a one-dimensional channel, it is computationally as efficient as and physically more rigorous than the ...

Solution-processed ambipolar vertical organic field effect transistor

Related Articles Exact control of junction position using epitaxial NiSi2 crystallization in ultrathin silicon-on-insulator metal-oxidesemiconductor field-effect transistors AIP Advances 2, 032126 (2012) Triisopropylsilylethynyl-functionalized anthradithiophene derivatives for solution processable organic field effect transistors Appl. Phys. Lett. 101, 043301 (2012) Electric field-induced scatt...

Feasibility, Accuracy, and Performance of Contact Block Reduction Method for Multi-band Simulations of Ballistic Quantum Transport

Related Articles Correlating stress generation and sheet resistance in InAlN/GaN nanoribbon high electron mobility transistors Appl. Phys. Lett. 101, 113101 (2012) Nonmagnetic spin-field-effect transistor Appl. Phys. Lett. 101, 082407 (2012) Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon Appl. Phys. Lett. 100, 213107 (2012) Threshold voltage modulation mechan...

Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors